Skip to content
1887
Volume 11, Issue 4
  • ISSN: 0032-1400

Abstract

The rapid development of thick film integrated circuits has created a need for preparations that will provide resistor films on a variety of substrates. In the development of the new range of materials described in this article advantage has been taken of the complex mechanism of conduction through ruthenium dioxide.

Loading

Article metrics loading...

/content/journals/10.1595/003214067X114126129
1967-01-01
2024-04-19
Loading full text...

Full text loading...

/deliver/fulltext/pmr/11/4/pmr0011-0126.html?itemId=/content/journals/10.1595/003214067X114126129&mimeType=html&fmt=ahah

References

  1. Verwey E. J. W., Haaijman P. W., Romeijn F. C., and van G. W. 1950, 5, 173187
  2. Iles G. S., and Collier O. N. Johnson Matthey, British Patent Appln 46910/66
http://instance.metastore.ingenta.com/content/journals/10.1595/003214067X114126129
Loading
/content/journals/10.1595/003214067X114126129
Loading

Data & Media loading...

  • Article Type: Research Article
This is a required field
Please enter a valid email address
Approval was a Success
Invalid data
An Error Occurred
Approval was partially successful, following selected items could not be processed due to error