An optimal platinum alloy for precision casting was developed by taking 25 possible alloying elements into consideration. In order to rank these elements an equation was designed. The ranking allowed five promising alloy compositions to be identified. From these five alloys arc melted buttons were produced and tested for homogeneity and hardness to ensure their suitability as jewellery alloys. A pyrometer was used to measure solidus temperatures. In a second iteration, the five alloys were further improved and the most promising alloys were cast and compared to a commonly used jewellery alloy: platinum-copper-gallium (PtCuGa). The comparison was based on the melting interval and on microstructural investigations, carried out by scanning electron and optical microscopy, while mechanical properties were determined by tensile testing. Additionally, optical properties such as reflectivity and colour were investigated. After the second iteration two very promising compositions were identified: PtCuFeMnCr and PtCuFePdVY.
In the 2014 review (1) discovery circumstances for 85Ru and 86Ru were referenced only in the form of a preprint but have now been reported in the open literature (2). For the most recently discovered isotopes the discovery years for both 128Rh and 90Pd are the manuscript dates of the given references whilst for 125Ru, 130Pd and 131Pd the common discovery year corresponds to the original...
The down-scaling of nanoelectronic devices to ever smaller dimensions and greater performance has pushed silicon-based devices to their physical limits. Much effort is currently being invested in research to examine the feasibility of replacing Si by a higher mobility semiconductor, such as germanium, in niche high-performance metal oxide semiconductor (MOS) devices. Before Ge can be adopted in industry, a suitable contact material for the active areas of a transistor must be identified. It is proposed that platinum group metal (pgm) germanides be used for this purpose, in a similar manner as metal silicides are used in Si technology. Implementation of Ge-based technology requires a thorough understanding of the solid-state interactions in metal/Ge systems in order to foresee and avoid problems that may be encountered during integration. We present a systematic study of the solid-state interactions in germanide systems of four of the pgms: iridium, platinum, palladium and rhodium. Our approach was essentially twofold. Firstly, conventional thin film couples were used to study the sequence of phase formation in the germanide systems. Conventional thin film couples were also used to identify and monitor the dominant diffusing species during the formation of some of the germanides as these can influence the thermal stability of a device. Secondly, we observed and analysed several aspects of the lateral diffusion reactions in these four systems, including activation energies and diffusion mechanisms. Lateral diffusion couples were prepared by the deposition of thick rectangular islands of one material on to thin films of another material. Rutherford backscattering spectrometry (RBS) and microprobe-Rutherford backscattering spectrometry (μRBS) were used to analyse several aspects of the thin film and lateral diffusion interactions respectively. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were also employed.
The thermodynamic properties were reviewed by the author in 1995. A new assessment of the enthalpy of fusion has led to a revision of the thermodynamic properties of the liquid phase and although the enthalpy of sublimation at 298.15 K is retained as 377 ± 4 kJ mol–1 the normal boiling point is revised to 3272 K at one atmosphere pressure.
