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1887
Volume 11, Issue 4
  • ISSN: 0032-1400

Abstract

The rapid development of thick film integrated circuits has created a need for preparations that will provide resistor films on a variety of substrates. In the development of the new range of materials described in this article advantage has been taken of the complex mechanism of conduction through ruthenium dioxide.

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/content/journals/10.1595/003214067X114126129
1967-01-01
2024-02-21
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References

  1. Verwey E. J. W., Haaijman P. W., Romeijn F. C., and van G. W. 1950, 5, 173187
  2. Iles G. S., and Collier O. N. Johnson Matthey, British Patent Appln 46910/66
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  • Article Type: Research Article
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